Semiconductor Heterojunction Electrode IV. An XPS/AES Study to Iron-Oxide-Coated Amorphous Silicon
نویسندگان
چکیده
منابع مشابه
Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells
Articles you may be interested in Optimized amorphous silicon oxide buffer layers for silicon heterojunction solar cells with microcrystalline silicon oxide contact layers Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer Appl. Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon ...
متن کاملAmorphous silicon on p-type crystalline silicon heterojunction
2014 A junction was grown by d.c. sputtering of n-type silicon on a p-type crystalline substrate. Ohmic contacts were deposited by evaporation of aluminum. The junction obeyed Schottky model both under forward and reverse bias conditions, but with higher idealization factor « n » due to its high internal resistance. The 1/C2-V relation showed the presence of localized and interface states. The ...
متن کاملNovel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire
An aqueous ferric nitrate nonahydrate (Fe(NO3)3.9H2O) and magnesium oxide (MgO) were mixed and deposited on silicon nanowires (SiNWs), the carbon nanotubes (CNTs) formed by the concentration of Fe3O4/MgO catalysts with the mole ratio set at 0.15:9.85 and 600°C had diameter between 15.23 to 90nm with high-density distribution of CNT while those with the mole ratio set at 0.45:9.55 and 730°C had ...
متن کاملSession DD: Oxide Semiconductor Heterojunction Diodes
8:20 AM DD1, Ultraviolet Photodetectors with Novel Oxide Thin Films: Shizuo Fujita1; Takumi Ikenoue1; Naoki Kameyama1; Takayoshi Oshima1; 1Kyoto University A variety of wide band gap oxide semiconductors, which are recognized as stable and environmental-friendly materials, can meet various demands for detectable wavelength, sensitivity, cost, and endurance of ultraviolet photodetectors, in cont...
متن کاملHigh Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector
One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Denki Kagaku oyobi Kogyo Butsuri Kagaku
سال: 1983
ISSN: 0366-9297,2434-2556
DOI: 10.5796/kogyobutsurikagaku.51.854